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irg4bc15ud-spbf IRG4BC15UD-LPBF insulated gate bipolar transistor withultrafast soft recovery diode features e g n-channel c v ces = 600v v ce(on) typ. = 2.02v @v ge = 15v, i c = 7.8a thermal resistance ultrafast copack igbt benefits www.irf.com 1 ultrafast: optimized for high frequencies from10 to 30 khz in hard switching ? igbt co-packaged with ultra-soft-recovery antiparallel diode ? industry standard d 2 pak & to-262 packages ? lead-free best value for appliance and industrial applications ? high noise immune "positive only" gate drive- negative bias gate drive not necessary ? for low emi designs- requires little or no snubbing ? single package switch for bridge circuit applications ? compatible with high voltage gate driver ic's ? allows simpler gate drive d 2 pak irg4bc15ud-s to-262 irg4bc15ud-l parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 14 i c @ t c = 100c continuous collector current 7.8 i cm pulsed collector current 42 a i lm clamped inductive load current 42 i f @ t c = 100c diode continuous forward current 4.0 i fm diode maximum forward current 16 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 49 p d @ t c = 100c maximum power dissipation 19 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
parameter min. typ. max. units r jc junction-to-case - igbt CCC CCC 2.7 r jc junction-to-case - diode CCC CCC 7.0 c/w r cs case-to-sink, flat, greased surface CCC 0.50 CCC r ja junction-to-ambient, typical socket mount CCC CCC 80 r ja junction-to-ambient (pcb mount, steady state) CCC CCC 40 wt weight CCC 2 (0.07) CCC g (oz) 08/27/04 pd - 95781 downloaded from: http:///

parameter min. typ. max. units conditions q g total gate charge (turn-on) CCC 23 35 i c = 7.8a qge gate - emitter charge (turn-on) CCC 4.0 6.0 nc v cc = 400v q gc gate - collector charge (turn-on) CCC 9.6 14 v ge = 15v t d(on) turn-on delay time CCC 17 CCC t j = 25c t r rise time CCC 20 CCC ns i c = 7.8a, v cc = 480v t d(off) turn-off delay time CCC 160 240 v ge = 15v, r g = 75 ? t f fall time CCC 83 120 energy losses include "tail" and e on turn-on switching loss CCC 0.24 CCC diode reverse recovery. e off turn-off switching loss CCC 0.26 CCC mj e ts total switching loss CCC 0.50 0.63 t d(on) turn-on delay time CCC 16 CCC t j = 150c, t r rise time CCC 21 CCC ns i c = 7.8a, v cc = 480v t d(off) turn-off delay time CCC 180 CCC v ge = 15v, r g = 75 ? t f fall time CCC 220 CCC energy losses include "tail" and e ts total switching loss CCC 0.76 CCC mj diode reverse recovery. l e internal emitter inductance CCC 7.5 CCC nh measured 5mm from package c ies input capacitance CCC 410 CCC v ge = 0v c oes output capacitance CCC 37 CCC pf v cc = 30v c res reverse transfer capacitance CCC 5.3 CCC ? = 1.0mhz t rr diode reverse recovery time CCC 28 42 ns t j = 25c CCC 38 57 t j = 125c i f = 4.0a i rr diode peak reverse recovery current CCC 2.9 5.2 a t j = 25c CCC 3.7 6.7 t j = 125c v r = 200v q rr diode reverse recovery charge CCC 40 60 nc t j = 25c CCC 70 110 t j = 125c di/dt 200a/s di (rec)m /dt diode peak rate of fall of recovery CCC 280 CCC a/s t j = 25c during t b CCC 240 CCC t j = 125c parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 CCC CCC v v ge = 0v, i c = 250a ? v (br)ces / ? t j temperature coeff. of breakdown voltage CCC 0.63 CCC v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage CCC 2.02 2.4 i c = 7.8a v ge = 15v CCC 2.56 CCC v i c = 14a CCC 2.21 CCC i c = 7.8a, t j = 150c v ge(th) gate threshold voltage 3.0 CCC 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage CCC -10 CCC mv/c v ce = v ge , i c = 250a g fe forward transconductance 4.1 6.2 CCC s v ce = 100v, i c = 7.8a i ces zero gate voltage collector current CCC CCC 250 a v ge = 0v, v ce = 600v CCC CCC 1400 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop CCC 1.5 1.8 v i c = 4.0a CCC 1.4 1.7 i c = 4.0a, t j = 150c i ges gate-to-emitter leakage current CCC CCC 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified) downloaded from: http:///

0.1 1 10 100 0.1 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j t = 150 c j 0.1 1 10 100 5.0 10.0 15.0 20.0 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 150 c j t = 25 c j 0.1 1 10 100 f , frequency ( khz ) 0.00 2.00 4.00 4.00 6.00 8.00 8.00 10.00 12.00 12.00 0.00 4.00 8.00 12.00 l o a d c u r r e n t ( a ) duty cycle : 50% tj = 125c tsink = 90c ta = 55c gate drive as specified turn-on losses include effects of reverse recovery power dissipation = 11w for heatsink mount power dissipation = 1.8w for typical pcb socket mount 60% of rated voltage ideal diodes downloaded from: http:///

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" # ! 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 2 4 6 8 10 12 14 t , case temperature ( c) maximum dc collector current(a) c -60 -40 -20 0 20 40 60 80 100 120 140 t j , junction temperature (c) 1.0 2.0 3.0 4.0 v c e , c o l l e c t o r - t o e m i t t e r v o l t a g e ( v ) i c = 14a v ge = 15v 80s pulse width i c = 7.8a i c = 3.9a downloaded from: http:///

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! -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.1 1 10 t o t a l s w i t c h i n g l o s s e s ( m j ) r g = 75 ? v ge = 15v v cc = 480v i c = 14a i c = 7.8a i c = 3.9a 0 5 10 15 20 25 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 7.8a cc c 1 10 100 0 200 400 600 800 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 0 10 20 30 40 50 r g , gate resistance ( ? ) 0.42 0.44 0.46 0.48 t o t a l s w i t c h i n g l o s s e s ( m j ) v cc = 480v v ge = 15v t j = 25c i c = 7.8a downloaded from: http:///

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%( 0.1 1 10 1 00 0.0 1.0 2.0 3.0 4.0 5.0 6.0 fm forward voltage drop - v (v) t = 150c t = 125c t = 25c jj j &" #)& 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 c , c a p a c i t a n c e ( p f ) v ge = 20v t j = 125 safe operating area 2 4 6 8 10 12 14 16 i c , collector current (a) 0.0 0.4 0.8 1.2 1.6 2.0 t o t a l s w i t c h i n g l o s s e s ( m j ) r g = 75 ? tj = 150c v ge = 15v v cc = 480v downloaded from: http:///

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2 0 2 5 3 0 3 5 4 0 4 5 5 0 100 1000 f di /dt - (a/s) i = 8.0a i = 4.0a f f v = 200v t = 125c t = 25c rj j 0 2 4 6 8 1 0 1 2 1 4 100 1000 f i = 8.0a i = 4.0a v = 200v t = 125c t = 25c rj j di /dt - (a/s) f f 0 40 80 1 20 1 60 2 00 100 1000 f di /dt - (a/s) i = 8.0a i = 4.0a v = 200v t = 125c t = 25c rj j f f 100 1 000 100 1000 f di /dt - (a/s) a i = 8.0a i = 4.0a v = 200v t = 125c t = 25c rj j f f downloaded from: http:///

same type device as d.u.t. d.u.t. 430f 80% of vce

t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5 s vce ic d t 90% vge + vge eoff =

!"# vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vc c trr qrr = trr tx id dt

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vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit
figure 18e. macro waveforms for figure 18a's test circuit downloaded from: http:///

dimensions are shown in millimeters (inches) note: "p" in as s embly line pos ition indicates "l ead-f ree" f 530s t his is an irf530s with l ot code 8024 assembled on ww 02, 2000 in the assembly line "l" assembly lot code int ernational rect ifier logo part number dat e code ye ar 0 = 2000 week 02 line l f 530s a = as s e mb l y s i t e code we e k 02 p = de s i gn at e s l e ad - f r e e product (opt ional) rectifier international logo lot code as s e mb l y year 0 = 2000 dat e code part number downloaded from: http:///

to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) assembly lot code rect if ier int ernational as s e mb le d on ww 19, 1997 note: "p" in as sembly line pos ition indicates "lead-f ree" in the assembly line "c" logo t his is an irl3103l lot code 1789 example: line c dat e code week 19 ye ar 7 = 1997 part number part number logo lot code assembly international rect if ier product (optional) p = de signates lead-free a = assembly site code week 19 ye ar 7 = 1997 dat e code or downloaded from: http:///

data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/04 notes: repetitive rating: v ge =20v; pulse width limited by maximum junction temperature. v cc =80%(v ces ), v ge =20v, l=10h, r g = 75 ? pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. this only applies to to-262 package. this applies to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint andsoldering techniques refer to application note #an-994.

dimensions are shown in millimeters (inches) 3 4 4 trr f eed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl f eed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 ) 23.90 (.941 ) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362 ) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. downloaded from: http:///
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:///

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